NTTFS5D9N08H دیتاشیت

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مشاهده دیتاشیت NTTFS5D9N08H	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTTFS5D9N08HTWG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 2.7W;100W
Total Gate Charge (Qg@Vgs): 31nC@10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 2040pF@40V
Continuous Drain Current (Id): 13A;84A
Gate Threshold Voltage (Vgs(th)@Id): 4V@120uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 5.9mΩ@23A,10V
Package: PQFN-8(3.3x3.3)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta), 100W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.3x3.3)
Package / Case: 8-PowerWDFN
detail: N-Channel 80V 13A (Ta), 84A (Tc) 2.7W (Ta), 100W (Tc) Surface Mount 8-PQFN (3.3x3.3)